IRG 2

Fundamentals of Amorphous Oxide Semiconductors

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Michael J. Bedzyk | Material Science & Engineering | Physics & Astronomy | Applied Physics

Robert P. H. Chang (Leader) | Material Science & Engineering | Applied Physics
Vinayak P. Dravid  | Material Science & Engineering | Applied Physics
Gabriela Gonzalez-Aviles Physics, DePaul University
Matthew A. Grayson (Co-Leader)  | Electrical Engineering & Computer Science | Applied Physics
Mercouri Kanatzidis | Chemistry | Material Science & Engineering
Tobin J. Marks | Material Science & Engineering | Chemistry | Applied Physics
Julia E. Medvedeva | Physics, Missouri University of Science and Technology
Peter Voorhees | Material Science & Engineering | Applied Physics

The ultimate goal of IRG 2 is a transformative materials science (processing-structure-properties) understanding of amorphous oxide semiconductor (AOS) materials, leading to improved materials and enabling their applications. In particular, potential outcomes include knowledge-based approaches for enhancing AOS properties in critical areas such as annealing/structural relaxation, carrier generation, control of sub-gap bulk and interface states, mobility enhancement, and facile/low-temperature deposition methodologies. By employing a systematic IRG-based approach, IRG 2 strives to make significant advances toward resolving far-reaching science questions about AOS materials, as well as facilitating the discovery of new AOS classes. In addition to active matrix organic light-emitting diode (AMOLED) and active matrix liquid-crystal display (AMLCD) applications, there are many other technological applications on the near and far horizons, including UV detectors, fully transparent displays, integrated on-glass electronics, flexible electronics, and energy-conversion devices and systems. Furthermore, IRG 2 hopes to develop one or more predictive models for the design and synthesis of complex amorphous oxide thin films with superior and unique optical, electrical, and thermal properties. IRG 2 also envisions broadening the ramifications of this amorphous semiconductor research to extend to amorphous oxides in general, one example being high-k amorphous oxide insulators (dielectrics), as well as opening the door to new amorphous nitrides, carbides, etc.

Project Highlights: